/ˌdiː kjuː ˈɛs/
n. "DDR memory strobe signal capturing DQ data on both clock edges via source-synchronous timing unlike common system CLK."
DQS, short for Data Strobe, transmits alongside bidirectional DQ pins in DDR4/5 SDRAM—memory controller drives DQS center-aligned during WRITEs (90° phase shift) while DRAM outputs edge-aligned during READs, enabling source-synchronous capture immune to board skew. DLL/PLL centers DQS within DQ eye ensuring setup/hold at 3200MT/s; contrasts system CLK by activating only during burst transfers with preamble Hi-Z→low transition signaling data valid window.
## Key Characteristics - Bidirectional Burst Clock: DQS toggles with DQ transfers only; x8 uses 1 DQS, x16 uses 2 per byte lane. - Phase Alignment: WRITE center-sampled (tDQSS); READ edge-sampled after 90° DLL shift maximizing margins. - Differential Pair: /DQS improves noise rejection vs single-ended; Write Leveling calibrates tDQSQ skew during training. - Preamble/Postamble: Hi-Z→low→Hi-Z brackets 8n burst; ODT terminates during READs preventing reflections. - Gate Training: DQS gating masks invalid edges; per-bit deskew compensates intra-byte skew up to 0.2UI.
// DDR4 controller WRITE timing: DQS center-aligned to DQ
// tCK=0.625ns @3200MT/s, burst BL8=16ns
typedef struct {
uint8_t dq; // Byte lane data
uint8_t dm; // Data mask
} ddr_burst_t;
void ddr_write(uint32_t addr, ddr_burst_t* burst) {
// tRCD + tCL latency
mrr_write_leveling(); // Align DQS to CK
mrr_vref_dq(0.55); // Set DQ ODT
// Command phase: ACTIVATE → CAS WRITE
ddr_cmd(CMD_WRITE, addr);
// tWPRE=1tCK preamble
dqs_preamble_low(); // Hi-Z → low
for(int i = 0; i < 8; i++) { // BL8
dq_drive(burst->dq[i]);
dqs_toggle(); // Center DQ window
}
dqs_postamble(); // low → Hi-Z
}Conceptually, DQS solves DDR's half-duplex dilemma—DRAM sources DQS+ DQ during READ (edge-aligned for controller DDIO), controller reverses roles during WRITE (center-aligned via Write Leveling) ensuring fly-by topology timing closure without per-DQ PLLs. ZQ calibration trims RON/RTT matching ODT to 240Ω while PRBS31 stresses RTL flops; integrates with SerDes fabric dumping 64GB/s to HBM over PAM4 links backhauling Bluetooth sensor fusion.